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Automated system for silicone carbide single crystal growth by sublimation method

Co-design of EZAN the Nitride Crystals Group and ISSP RAS


The equipment allows crystal growing up to 80 mm in diameter, 30 mm in height.


The induction heating is carried out by means of the highly stable transistor generator with capacity of up to 100 kW. The water-cooled transistor frequency converter (IGBT) (with maximum output of 100 kW and adjustable frequency of 5-10 kHz, produced by EZAN, is used as a generator.


The process control and management rack allows automatic control of the technological process of crystal generation. It houses the devices for control over vacuum system, gas delivery system, heating power, seed crystal holder temperature control, water cooling control. Management and control of all processes is carried out by means of the industrial computer with 17” LCD display.


The growth process automatic control system provides a possibility of setting the program of the automatic equipment operation at all stages of the technological process. The program module of the technological data collection and processing after the crystal structure growth analysis allows effective optimization of the technological process.





Technical characteristics of equipment

  • Method of silicone carbide (SiC) growth 
    		• Sublimation method   
  • Maximum crystal diameter  
    		• Not less than 50 mm 
  • Maximum sublimation temperature 
    		• up to 2600О С 
  • Crucible 
    		• up to 110 mm 
  • Internal diameter of quartz reactor  
    		• 210 mm 
  • Internal diameter of inducer 
    		• 270 mm 
  • Maximum output power of HF generator 
    		• up to 100 kW  
  • Generator frequency 
    		• 5-20 kHz  
  • Type of generator 
    		• Transistor (IGBT), water-cooled  
  • Effeciency  
    		• 95% 
  • Permissible deviation of frequency converter output power from the specified value  
    		• ± 0,05%  
  • Rate of lowod rotation 
    		• 1-30 rpm   
  • Operational speed of lower rod movement 
    		• 0.1-1 mm/hour 
  • Operational stroke of lower rod 
    		• 150 mm 
  • Limit inert gas pressure in chamber 
    		• max. 1.1x105Pa  
  • Limit primary vacuum in the reactor with the inducer switched off 
    		• max. 2.6 Pa 
  • Limit vacuum in the reactor with the inducer switched off 
    		• max. 10-3 Pa 
  • Number of lines for process gas delivery 
    		• Min. 2 
  • Consumed power of the installation (without generator)  
    		• max. 3 kW 
  • Cooling water pressure 
    		• from 200 kPa to 250 kPa 
  • from 200 kPa to 250 kPa 
    		• Max. 3 m3/hour