Sapphire profiled crystals growing by Stepanov method

The Stepanov method and its modifications allow obtaining a wide range of metal crystal profiles, semi-conductors and dielectrics with constant cross-section as well as articles of more complicated forms by crystallizing them directly from the hotmelt. This method is based on the aspect of capillary shaping. When crystal grows the melt comes from the pot through capillary channels of the special die (shaper) to its working surface the edges of which set the contour of a thin layer of melt (meniscus) enclosed between the shaper and the interphase boundary. The cross-section of the pulled crystal is determined by the shaper edges geometery.

EZAN jointly withRostox-N, Ltd. manufactures a wide range of sapphire crystal profiles in a form of bands, rods of different cross-section and pipes. Crystal growing in a group (up to 42 rods and 12 bands) allows significant increase in the processing rate.

Sapphire products

Bands (after growth), plates (thin grinding), windows (polishing) Crystallographic orientation: A-plane

Width, mm	Thickness, mm	Length, mm
up to~40	up to~6	up to~500
~40 – 70	up to~6	up to~400
~70 - 120	up to~6	up to~300

Pipes (after growth, ground and polished) Crystallographic orientation: C-axis along length

Internal diameter, mm	Wall thickness, mm	Length, mm
~1.5 – 20	~0.5 – 3	up to ~600
~20 – 30	~1 – 4	up to ~500
~30 – 40	~1.5 – 4	up to ~350
~40 – 50	~1.5 – 4	up to ~300

Rods (after growth, ground and polished) Crystallographic orientation: C-axis along length

Diameter, mm	Length, mm
~1 – 10	up to ~500

Products of special shape and make – on request