Automated system for sapphire profiled single crystal growth (Nika-PROFILE)
The system NIKA-PROFILE is designed for industrial production of shaped sapphire single crystals by the Stepanov/EFG method. It was created on the basis of the up-to-date mechanics and electronics, distributed systems of data collection and processing, software for crystallization process management with a possibility of adaptive control. The induction heating is carried out by means of the highly stable transistor generator with capacity of up to 100 kW. The equipment allows growing the crystals to 7 kg, up to 250 mm wide and 850 mm long from the pots with a diameter of up to 220 mm. The machine can be completed with the precision system of resistance heating with a nominal power of 120 kW. The growth automatic control system makes it possible to provide through automation of the process with automatic seed melting. The program module of the technological data collection and processing after the crystal structure growth analysis allows effective optimization of the technological process.
Adaptive ACS
The adaptive (self-adjusting) system of automatic control over the crystal diameter provides for the necessary amount of control and stability throughout the whole growth process. The significant advantage of the ACS is availability of several classes of automatic regulators, such as self-adjusting PID-regulator, incremental regulator, self-adjusting predictor-corrector which, as the practice has shown, provides for the best quality of a crystal shape control. We take into consideration the features of the customer’s process and carry out automation of special processing methods and procedures.
Technical characteristics of equipment:
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Melting temperature
|
up to 2200О С |
 |
|
Crucible diameter
|
250 mm |
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Crystal mass
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up to 5 kg; 10 kg |
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Weight sensor range
|
up to 5 kg; 10 kg |
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Sensor sensitivity
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min. 0.02 g; 0.04 g |
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Rate of upper rod movement
|
|
| operational |
from 6 to 120.0 mm/h |
| accelerated |
from 0.5 to 150.0 mm/min |
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Type of converter
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transistor (IGBT) |
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Output power of converter
|
100 kW |
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Frequency
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5-20 kHz |
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Output power range
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from 1 to 100% |
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Efficiency
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min. 93% |
 |
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Permissible deviation of output power
|
± 0,05% |
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Inert gas pressure in chamber
|
max. 1,5x105Pa |
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Limit primary vacuum
|
max. 2.6 Pa |
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Cooling water pressure
|
from 200 kPa to 250 kPa |
 Brief description of equipment.pdf Description of software.pdf
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